Title:
ｎ型ＳｉＣ単結晶基板及びその製造方法、並びにＳｉＣエピタキシャルウェハ
Document Type and Number:
Japanese Patent JP6757955
Kind Code:
B2
Abstract:
An n-type SiC single crystal substrate of the present invention is provided which is a substrate doped with both a donor and an acceptor, and has a difference between a donor concentration and an acceptor concentration in an outer peripheral portion which is smaller than a difference between a donor concentration and an acceptor concentration in a central portion, and is smaller than 3.0×1019/cm3.
Inventors:
Sato Eto
Suo Yusei
Tomohisa Kato
Suo Yusei
Tomohisa Kato
Application Number:
JP2016186907A
Publication Date:
September 23, 2020
Filing Date:
September 26, 2016
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
SHOWA DENKO K.K.
SHOWA DENKO K.K.
International Classes:
C30B29/36; C30B23/06; H01L21/203
Domestic Patent References:
| JP2015030640A | ||||
| JP2010064918A | ||||
| JP2011219297A | ||||
| JP2006111478A | ||||
| JP2003073194A | ||||
| JP2012031014A |
Foreign References:
| WO2015129876A1 |
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomoo Katsumata
Masatake Shiga
Suzuki Mitsuyoshi
Norihiko Ara
Tomoo Katsumata
Masatake Shiga
Suzuki Mitsuyoshi