Title:
半導体装置
Document Type and Number:
Japanese Patent JP6758029
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To suppress increase in collector current of an output transistor at a high temperature.SOLUTION: A first transistor Q1 is an NPN-type bipolar transistor whose emitter is grounded and whose collector is connected with an OUT terminal. A temperature compensation circuit 132A is connected with a base of the first transistor Q1, and sinks a compensation current Ithat is larger as a temperature becomes higher. A second transistor Q2 is an NPN-type bipolar transistor whose collector and base are connected with the base of the first transistor Q1, and its collector current Iis the compensation current I. A first resistor R1 is provided between an emitter of the second transistor Q2 and the ground.SELECTED DRAWING: Figure 3
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Inventors:
Naohiro Nomura
Takatoshi Manabe
Takatoshi Manabe
Application Number:
JP2015137510A
Publication Date:
September 23, 2020
Filing Date:
July 09, 2015
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H03K5/08; H03F1/30; H03F3/45; H03K17/14
Domestic Patent References:
| JP2002217378A | ||||
| JP8314561A | ||||
| JP2015032998A | ||||
| JP2008193264A | ||||
| JP2004289640A | ||||
| JP3082915U | ||||
| JP2009048464A | ||||
| JP2006304178A |
Attorney, Agent or Firm:
Sakaki Morishita
Masaki Taiki
Masaki Taiki