Title:
六方格子結晶構造を有するＩＩＩ−Ｖ族半導体層を含んだ半導体構造
Document Type and Number:
Japanese Patent JP6770516
Kind Code:
B2
Abstract:
A semiconductor structure (100) comprising:a substrate (102),a first layer (106) of AlXGaYIn(1-X-Y)N disposed on the substrate,stacks (107, 109) of several second and third layers (108, 110) alternating against each other, between the substrate and the first layer,a fourth layer (112) of AlXGaYIn(1-X-Y)N, between the stacks,a relaxation layer of AlN disposed between the fourth layer and one of the stacks,and, in each of the stacks:the level of Ga of the second layers increases from one layer to the next in a direction from the substrate to the first layer,the level of Ga of the third layers is constant or decreasing from one layer to the next in said direction, the average mesh parameter of each group of adjacent second and third layers increasing from one group to the next in said direction,the thickness of the second and third layers is less than 5 nm.
Inventors:
Charles Mathieu
Application Number:
JP2017526553A
Publication Date:
October 14, 2020
Filing Date:
November 17, 2015
Export Citation:
Assignee:
INSERM(INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE)
International Classes:
H01L33/12; H01L21/20; H01L21/205; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP2012243871A | ||||
| JP2014057020A | ||||
| JP2010232293A | ||||
| JP2014036231A |
Foreign References:
| US20130187125 |
Attorney, Agent or Firm:
Shinei Patent Office