Title:
マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
Document Type and Number:
Japanese Patent JP6772037
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a mask blank high in correcting rate and high in uniformity of correcting rate in-plane when EB defect correction is conducted to a black defect parts of a pattern of a thin film even when a ratio of content of metals to total content of the metals and silicon in a thin film formed by a material containing metals, silicon and nitrogen for forming a transfer pattern is 0.07 or less.SOLUTION: A mask blank has a phase shift film 2 which is a thin film for forming a transfer pattern on a light transmissive substrate 1. The phase shift film 2 is formed by a material containing metals, silicon and nitrogen. When a microscope image is taken by a high resolution transmission electron microscope to an inside area of the phase shift film 2, the number of local structure areas in which a fine crystal structure of silicon nitride which is specified by the microscope image is 50 or less per 0.01 μmof actual area of the inside area.SELECTED DRAWING: Figure 1
Inventors:
Hashimoto Masahiro
Mariko Uchida
Kawasumi Isao
Mariko Uchida
Kawasumi Isao
Application Number:
JP2016220399A
Publication Date:
October 21, 2020
Filing Date:
November 11, 2016
Export Citation:
Assignee:
HOYA CORPORATION
International Classes:
G03F1/32; G03F1/72; G03F1/80; H01L21/3065; H01L21/316; H01L21/318
Domestic Patent References:
| JP20123255A | ||||
| JP201621075A |
Foreign References:
| WO2016103843A1 | ||||
| WO2013140887A1 | ||||
| WO2016158649A1 | ||||
| US20030000921 |
Attorney, Agent or Firm:
Yutaka Nagata
Takafumi Oshima
Tsukasa Ota
Takafumi Oshima
Tsukasa Ota