Title:
シリコン系誘電体上の六方晶窒化ホウ素の直接形成
Document Type and Number:
Japanese Patent JP6775804
Kind Code:
B2
Abstract:
A method of forming a multilayer structure, the method comprising:providing a silicon wafer, the silicon wafer comprising two major, generally parallel surfaces, one of which is a front surface of the silicon wafer and the other of which is a back surface of the silicon wafer, a circumferential edge joining the front and back surfaces of the silicon wafer, a central plane between the front surface and the back surface of the silicon wafer, and a bulk region between the front and back surfaces of the silicon wafer,contacting the front surface of the silicon wafer with (i) a boron-containing gas or a boron-containing vapor and (ii) a nitrogen-containing gas or a nitrogen-containing vapor at a temperature sufficient to directly deposit a layer comprising hexagonal boron nitride in interfacial contact with the front surface of the silicon wafer, andafter the direct deposition of the hexagonal boron nitride layer, forming a metal film on the layer comprising hexagonal boron nitride, wherein the metal film comprises a front metal film surface, a back metal film surface, and a bulk metal region between the front and back metal film surfaces, and further wherein the back metal film surface is in interfacial contact with the layer comprising hexagonal boron nitride to thereby prepare the multilayer structure comprising the metal film, the layer comprising hexagonal boron nitride, and the silicon wafer.
More Like This:
Inventors:
Bicas berry
Sanjay Behula
Von Nguyen
Michael earliest
Sanjay Behula
Von Nguyen
Michael earliest
Application Number:
JP2018555266A
Publication Date:
October 28, 2020
Filing Date:
April 28, 2017
Export Citation:
Assignee:
GlobalWafers Co.,Ltd.
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
International Classes:
H01L21/20; C01B32/184; C01B32/186; C01B32/194; C23C14/14; C23C16/26; C23C16/38; C30B23/08; C30B25/18; C30B29/38; H01L21/205
Domestic Patent References:
| JP3223463A | ||||
| JP2016058631A | ||||
| JP2009298626A | ||||
| JP2004047956A | ||||
| JP2014090188A | ||||
| JP2015501277A |
Attorney, Agent or Firm:
Norihito Yamao
Haruo Nakano
Haruo Nakano