Title:
スピン流磁化反転素子、磁気抵抗効果素子および磁気メモリ
Document Type and Number:
Japanese Patent JP6777094
Kind Code:
B2
Abstract:
A spin current magnetization reversal element includes: a first ferromagnetic metal layer with a changeable magnetization direction, and a spin-orbit torque wiring, wherein a first direction is defined as a direction perpendicular to a surface of the first ferromagnetic metal layer, the spin-orbit torque wiring extends in a second direction intersecting the first direction, and the spin-orbit torque wiring is bonded to a first surface of the first ferromagnetic metal layer, wherein the spin-orbit torque wiring includes a pure spin current generator which is bonded to the first ferromagnetic metal layer, and a low-resistance portion which is connected to each of both ends of the pure spin current generator in the second direction and is formed of a material having a smaller electrical resistivity than the pure spin current generator, and the pure spin current generator is formed so that an area of a cross-section orthogonal to the first direction continuously and/or stepwisely increases as it recedes from a bonding surface bonded to the first ferromagnetic metal layer in the first direction.
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Inventors:
Yohei Shiokawa
Tomo Sasaki
Tomo Sasaki
Application Number:
JP2017552735A
Publication Date:
October 28, 2020
Filing Date:
November 25, 2016
Export Citation:
Assignee:
tdk Corporation
International Classes:
H01L29/82; G11B5/39; G11C11/16; H01L21/8239; H01L27/105; H01L43/08; H03B15/00
Domestic Patent References:
| JP2009194070A | ||||
| JP2014179618A |
Foreign References:
| US20150036415 | ||||
| US20150213869 |
Attorney, Agent or Firm:
Sumio Tanai
Norihiko Ara
Masato Iida
Akihiro Ogino
Norihiko Ara
Masato Iida
Akihiro Ogino