Title:
窒化ガリウム結晶からなる自立基板の製造方法
Document Type and Number:
Japanese Patent JP6785176
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a free-standing substrate, capable of preventing the surface abnormality of a gallium nitride crystal layer from occurring when peeling the gallium nitride crystal layer by irradiating it with a laser beam from the side of a sapphire substrate to improve the production yield of the free-standing substrate.SOLUTION: A method for manufacturing a free-standing substrate consisting of a gallium nitride crystal layer comprises the steps of: providing a gallium nitride crystal layer 2 having a thickness of 400-1400 μm on a sapphire substrate 1 by a flux method; and peeling the gallium nitride crystal layer 2 from the sapphire substrate 1 by irradiating the gallium nitride crystal layer with a laser beam from the side of the laser irradiated surface of the sapphire substrate 1 at a temperature of 400-1100°C to obtain a free-standing substrate. The arithmetic average surface roughness Ra of the laser irradiated surface is 3 μm or less, and the thickness and temperature of the gallium nitride crystal layer 2 satisfy the following formula. 0.7x+20≤T≤0.4x+590 (x is the thickness (μm) of the gallium nitride crystal layer 2; T is the temperature (°C).)SELECTED DRAWING: Figure 1
Inventors:
Noguchi Takashi
Yoshinori Isoda
Masahiro Sakai
Yoshinori Isoda
Masahiro Sakai
Application Number:
JP2017062248A
Publication Date:
November 18, 2020
Filing Date:
March 28, 2017
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
C30B29/38; C30B19/04
Domestic Patent References:
| JP2010514581A | ||||
| JP2006188409A |
Foreign References:
| WO2016088624A1 | ||||
| WO2015093447A1 |
Attorney, Agent or Firm:
Masumi Hosoda
Juno Aoki
Juno Aoki