Title:
炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6798293
Kind Code:
B2
Abstract:
The silicon carbide layer includes a second main surface opposite to a surface in contact with the silicon carbide single crystal substrate. The second main surface corresponds to a plane inclined relative to a {0001} plane in an off direction. The second main surface has a maximum diameter of not less than 100 mm. The second main surface has an outer circumferential region and a central region, the central region being surrounded by the outer circumferential region. The central region is provided with a first dislocation array of first half loops along a straight line perpendicular to the off direction. Each of the first half loops includes a pair of threading edge dislocations exposed at the second main surface. An area density of the first dislocation array at the central region is not more than 10/cm2.
Inventors:
Taro Nishiguchi
Kenji Hiratsuka
Kenji Hiratsuka
Application Number:
JP2016238507A
Publication Date:
December 09, 2020
Filing Date:
December 08, 2016
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B29/36; H01L21/20; H01L21/205; H01L21/314; H01L21/336; H01L29/12; H01L29/161; H01L29/78
Domestic Patent References:
| JP2015013761A |
Foreign References:
| WO2009035095A1 |
Attorney, Agent or Firm:
Fukami patent office