Title:
半導体装置
Document Type and Number:
Japanese Patent JP6805620
Kind Code:
B2
Abstract:
In a semiconductor device having an SJ structure, the reverse breakdown voltage decrease is suppressed while a main body region and a current detecting region are separated. Provided is a semiconductor device that has a semiconductor substrate, a main body region including one or more operation cells formed inside the semiconductor substrate, a current detecting region including one or more current detecting cells formed inside the semiconductor substrate, and an intermediate region that is provided between the main body region and the current detecting region and inside the semiconductor substrate and that includes an edge termination structure unit. A first conductivity-type column and a second conductivity-type column are alternately arranged at equal intervals in the main body region, the current detecting region, and the intermediate region.
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Inventors:
Takeyoshi Nishimura
Application Number:
JP2016157328A
Publication Date:
December 23, 2020
Filing Date:
August 10, 2016
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/76; H01L29/06; H01L29/78
Domestic Patent References:
| JP2014063907A | ||||
| JP2015179705A | ||||
| JP2012174704A | ||||
| JP2009004547A |
Foreign References:
| WO2015004891A1 | ||||
| WO2010137158A1 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation