Title:
半導体装置
Document Type and Number:
Japanese Patent JP6805622
Kind Code:
B2
Abstract:
A semiconductor apparatus is provided, comprising: a power semiconductor element which is connected between a first terminal on a high-potential side and a second terminal on a low-potential side; a first gate control section which controls a gate potential of the power semiconductor element according to a control signal; a discharge circuit which is discharges charges that are charged by the gate of the power semiconductor element; a second gate control section which controls the gate potential of the power semiconductor element according to a collector current of the power semiconductor element; a feedback section which feedbacks the charges to the gate of the power semiconductor element according to the collector potential of the power semiconductor element; and a current cutting off section which cuts off currents flowing from the first terminal to the gate of the power semiconductor element according to the control signal.
Inventors:
Shigemi Miyazawa
Application Number:
JP2016158608A
Publication Date:
December 23, 2020
Filing Date:
August 12, 2016
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
F02P3/055
Domestic Patent References:
| JP2002115637A | ||||
| JP2011127445A | ||||
| JP2009117786A | ||||
| JP9331625A | ||||
| JP2014238024A | ||||
| JP2001358339A |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation