Title:
半導体装置
Document Type and Number:
Japanese Patent JP6806252
Kind Code:
B2
Abstract:
A semiconductor device includes first conductive films that are provided, above a semiconductor substrate, at least on both sides of a non-formation region in which the first conductive films are not provided; an interlayer dielectric film including a first portion that is provided on the non-formation region, second portions provided above the first conductive film on both sides of the non-formation region, and a step portion that connects the first portion and the second portions; a second conductive film provided above the interlayer dielectric film; through terminal portions that penetrate the second portions of the interlayer dielectric film; and a wire bonded with the second conductive film above the first portion, where the through terminal portions include one or more first through terminal portions and one or more second through terminal portions being provided at positions opposite to each other with a bonded portion of the wire being interposed therebetween.
Inventors:
Iwamizu Morio
Application Number:
JP2019528982A
Publication Date:
January 06, 2021
Filing Date:
June 01, 2018
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/3205; H01L21/768; H01L23/522
Domestic Patent References:
| JP2003282574A | ||||
| JP6216188A | ||||
| JP2011018832A | ||||
| JP3141661A | ||||
| JP5226339A | ||||
| JP2017045865A | ||||
| JP2005142351A |
Foreign References:
| US6448641 | ||||
| US20040070042 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation