半導体装置の製造方法、基板処理装置およびプログラム

Title:

半導体装置の製造方法、基板処理装置およびプログラム

Document Type and Number:

Japanese Patent JP6807420

Kind Code:

B2

Abstract:

There is provided a technique for improving a resistance of a film to vibration in a semiconductor device having a vibrating film, including at least: forming a first silicon oxide film; forming a first silicon nitride film; forming a second silicon oxide film; and forming a second silicon nitride film, and each film formation is performed using a substrate processing apparatus configured to supply gas to a process chamber including upper and bottom electrodes, and selectively supply high frequency power or low frequency power to each of the upper and bottom electrodes by switching.

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Inventors:

Hachiman Tachibana
Naofumi Ohashi
Yuji Takasaki

Application Number:

JP2019029583A

Publication Date:

January 06, 2021

Filing Date:

February 21, 2019

Export Citation:

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Assignee:

Kokusai electric inc.

International Classes:

H01L21/316; B81C1/00; C23C16/42; C23C16/505; H01L21/31; H01L21/318; H04R19/00; H04R31/00

Domestic Patent References:

JP2016072661A
JP2007259165A
JP2016004155A
JP2010135634A
JP7254592A
JP2009302093A
JP6084812A
JP2015002219A
JP2012038965A
JP9186146A

Attorney, Agent or Firm:

Fukuoka Masahiro
Aniya Setsuo

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