固体撮像素子およびその製造方法

Japanese Patent JP6809215

B2

PROBLEM TO BE SOLVED: To provide a high definition and high sensitivity solid state imaging device which is easy to be manufactured and reduces color mixing.SOLUTION: A solid state imaging device is formed on a semiconductor substrate 10 and includes a color filter layer 30 in which color filters of a plurality of colors are arranged two-dimensionally in accordance with a preset regular pattern corresponding to each photoelectric conversion element 11 and a lower layer flattening layer 12 disposed only between a color filter 14 of a first color selected from the plurality of colors and the semiconductor substrate 10. When a thickness of the color filter 14 of the first color is A [nm], a film thickness of the lower layer flattening layer 12 is B [nm], and each film thickness of the color filters 15 and 16 of the colors other than the first color is C [ nm], the following expressions (1) to (3) are satisfied. 200[nm]≤A≤700[nm]...(1) 0[nm]