Title:
化合物、薄膜形成用原料及び薄膜の製造方法
Document Type and Number:
Japanese Patent JP6811514
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a material for thin film formation which has high vapor pressure, low melting point, and high thermal stability, and allows production of a high-quality metal-containing thin film.SOLUTION: The material for thin film formation contains a compound represented by the general formula (2) in the figure. (In the formula, R, R, R, Rand Reach independently represent hydrogen, a C1 to 4 linear or branched alkyl group, or a C3 to 12 trialkylsilyl group; R, Rand Reach independently represent a C1 to 4 linear or branched alkyl group; Mrepresents a metal atom; and m is a number from 1 to 4, where m+1 corresponds to the valence of the metal atom represented by M).SELECTED DRAWING: None
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Inventors:
Hiroki Sato
Watanuki Shoichi
Watanuki Shoichi
Application Number:
JP2016226604A
Publication Date:
January 13, 2021
Filing Date:
November 22, 2016
Export Citation:
Assignee:
ADEKA CORPORATION
International Classes:
C07F17/00; C23C16/18; H01L21/31; H01L21/316; H01L21/318
Domestic Patent References:
| JP2016037654A | ||||
| JP2003335791A |
Foreign References:
| GB2399817A | ||||
| KR1020080101040A |
Other References:
European Polymer Journal,2004年,40,1051-1056
Attorney, Agent or Firm:
Michiharu Soga
Kajinami order
Kazuhiro Oyaku
Satoshi Iino
Kajinami order
Kazuhiro Oyaku
Satoshi Iino