Title:
半導体基板の製造方法及び複合半導体基板の製造方法
Document Type and Number:
Japanese Patent JP6822146
Kind Code:
B2
Abstract:
A method for manufacturing a semiconductor substrate according to the present invention includes preparing a seed substrate (1) containing a semiconductor material, forming an ion implanted layer (2) at a certain depth from a front surface of a main surface of the seed substrate (1) by implanting ions into the seed substrate (1), growing a semiconductor layer (3) on the main surface of the seed substrate (1) with a vapor-phase synthesis method, and separating a semiconductor substrate (5) including the semiconductor layer (3) and a part (1a) of the seed substrate by irradiating the front surface of the main surface of at least any of the semiconductor layer (3) and the seed substrate (1) with light (4).
Inventors:
Yoshiki Nishibayashi
Kazuo Nakamae
Kazuo Nakamae
Application Number:
JP2016569523A
Publication Date:
January 27, 2021
Filing Date:
January 15, 2016
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L21/02; H01L21/20; H01L21/205; H01L21/265
Domestic Patent References:
| JP2010537936A | ||||
| JP5455595B2 | ||||
| JP2009088497A | ||||
| JP2001077335A | ||||
| JP2000077287A |
Attorney, Agent or Firm:
Fukami patent office