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Patent Searching and Data


Title:
エッチング方法
Document Type and Number:
Japanese Patent JP6823527
Kind Code:
B2
Abstract:
An etching method of etching a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The etching method includes a first process of forming a film on the end surface of each protrusion region; a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process; and a third process of anisotropically etching the one or more end surfaces exposed through the second process atomic layer by atomic layer. The processing target layer contains silicon nitride, and the film contains silicon oxide.

Inventors:
Kumakura Sho
Masahiro Tabata
Application Number:
JP2017080798A
Publication Date:
February 03, 2021
Filing Date:
April 14, 2017
Export Citation:
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Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; H01L21/316; H01L21/768; H01L23/532
Domestic Patent References:
JP2011215371A
JP2016027594A
JP2016503243A
JP2012018989A
JP2016216817A
JP2016131238A
JP8031797A
JP6318576A
Foreign References:
US20110059599
CN103311092A
WO2012008409A1
KR101702869B1
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka