Title:
エッチング方法
Document Type and Number:
Japanese Patent JP6824074
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an etching method by which a substrate including an indium-containing layer can be etched with a high rate at a low temperature.SOLUTION: An etching method comprises the steps of: supplying a chlorine-containing gas and an oxygen gas into a process chamber; producing plasma of the gases; and etching, by the plasma, a substrate including an indium-containing layer to form an etching structure in the indium-containing layer. In the etching method, the chlorine-containing gas and the oxygen gas are supplied into the process chamber so that the flow rate of the oxygen gas accounts for 3-35% of a total flow rate of the chlorine-containing gas and oxygen gas, and the temperature of the substrate is regulated to become 30-150°C.SELECTED DRAWING: Figure 4
More Like This:
| JP4143176 | Plasma processing method |
| JP6485270 | Electrode plate for plasma processing equipment |
| JP3227105 | EVACUATION SYSTEM |
Inventors:
Shoichi Murakami
Application Number:
JP2017045576A
Publication Date:
February 03, 2021
Filing Date:
March 10, 2017
Export Citation:
Assignee:
spp Technologies Co., Ltd.
International Classes:
H01L21/3065
Domestic Patent References:
| JP63124420A | ||||
| JP2000514246A |
Attorney, Agent or Firm:
Satoshi Murakami