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Title:
水平注入合成後回転連続VGF結晶成長装置及び方法
Document Type and Number:
Japanese Patent JP6837566
Kind Code:
B2
Abstract:
The invention provides a device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis, and belongs to the technical field of semiconductor crystal synthesis and growth. According to the used technical scheme, the device comprises a furnace body, a synthesis and crystal growth system positioned in a furnace cavity, and a heating system, a temperature measuring system, a heat preservation system and a control system matched therewith, wherein the synthesis and crystal growth system comprises a crucible and a volatile element carrier arranged on a horizontal side of the crucible, and the volatile element carrier is communicated with the crucible through an injection pipe to realize horizontal injection synthesis; the furnace body has a rotational freedom degree by means of a matched rotating mechanism, so that after the direct horizontal injection synthesis of a volatile element and a pure metal element, the entire furnace body is controlled by the rotating mechanism to slowly rotate, such that a high-purity compound semiconductor crystal is prepared through continuous VGF crystal growth after crystal synthesis, and the condition that a seed crystal is molten by the pure metal before VGF crystal growth can be avoided; and the method has characteristics of simple steps, easy operation and control, and is suitable for the industrial production of semiconductor crystals.

Inventors:
King Shahnameh
Grandson Kaede
Liu Keisei
Grandson same year
History
Shao members
Lee Xiao Arashi
Wang Yang
Attached
Application Number:
JP2019541269A
Publication Date:
March 03, 2021
Filing Date:
December 11, 2017
Export Citation:
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Assignee:
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
International Classes:
C30B29/40; C30B11/00
Foreign References:
CN105543949A
Attorney, Agent or Firm:
Taro Yaguchi