Title:
酸化物スパッタリングターゲット
Document Type and Number:
Japanese Patent JP6850981
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an oxide sputtering target capable of depositing a transparent conductive oxide film excellent in an environmental resistance (a resistance to a high temperature/high moisture environment), an etching workability, and an alkali resistance, by a sputtering method.SOLUTION: An oxide sputtering target is characterized in that a content ratio of a metal component element is 10.0 to 20.0 atomic% of Ga, 0.5 to 5.0 atomic% of Ti, and the remainder is Zn and an inevitable substance.SELECTED DRAWING: None
Inventors:
Yuto Mori
Kaho Kiuchi
Yujiro Hayashi
Kaho Kiuchi
Yujiro Hayashi
Application Number:
JP2016230182A
Publication Date:
March 31, 2021
Filing Date:
November 28, 2016
Export Citation:
Assignee:
Mitsubishi Materials Corporation
International Classes:
C23C14/34; C04B35/453
Domestic Patent References:
| JP2016098396A | ||||
| JP2016056065A | ||||
| JP2016134320A |
Attorney, Agent or Firm:
Yasushi Matsunuma
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
Masatake Shiga
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
Masatake Shiga