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Title:
センサマークおよびセンサマークの製造方法
Document Type and Number:
Japanese Patent JP6852183
Kind Code:
B2
Abstract:
A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.

Inventors:
Kurgist, Joost, Andre
Vanine, Fadim, Jevgenievic
Beckers, Johann, Franciscus, Maria
Jambun Natin, Madus Danang
Nasarevich, Maxim, Alexandrovich
Nikiperov, Andrei
Stas, Roland, Johannes, Wilhelms
Vress, Durfit, Ferdinand
Welters, Wilhelms, Jacobs, Johannes
Ricke, Sandro
Application Number:
JP2019550645A
Publication Date:
March 31, 2021
Filing Date:
February 15, 2018
Export Citation:
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Assignee:
AS M Netherlands B.V.
International Classes:
G03F7/20
Domestic Patent References:
JP2011003898A
JP2007180501A
JP2013074177A
JP2005045265A
JP2006173377A
Attorney, Agent or Firm:
Sakaki Morishita
Takeshi Aoki