Title:
金属化合物膜の成膜方法及び反応性スパッタ装置
Document Type and Number:
Japanese Patent JP6858985
Kind Code:
B2
Abstract:
The present invention makes it possible to form a composite metal compound film or a mixed film with a simple structure. The present invention comprises: a first step for forming a metal ultrathin film of a target on a substrate (S) by supplying an intended sputtering power set by a pulse control signal pattern to a sputtering electrode (18) on which the target is mounted while in a state in which an electrical discharge gas is introduced into a film formation chamber (11) and without introducing a reactive gas from a reactive gas introducer (16) into the film formation chamber only for the duration of an intended introduction time set by the pulse control signal pattern; and a second step for forming a metal ultrathin film of the target on the substrate (S) by supplying the intended sputtering power set by the pulse control signal pattern to the sputtering electrode (18) on which the target is mounted while in the state in which the electrical discharge gas is introduced into the film formation chamber and while introducing the reactive gas from the reactive gas introducer into the film formation chamber only for the duration of the intended introduction time set by the pulse control signal pattern.
Inventors:
Shinichiro Tax Office
Yasuhito Tanaka
Yasuhito Tanaka
Application Number:
JP2019082633A
Publication Date:
April 14, 2021
Filing Date:
April 24, 2019
Export Citation:
Assignee:
Syncron Co., Ltd.
International Classes:
C23C14/34; H01L21/316
Domestic Patent References:
| JP6423572B1 | ||||
| JP7166377A |
Attorney, Agent or Firm:
Eternal patent business corporation