Title:
成膜方法
Document Type and Number:
Japanese Patent JP6859095
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a magnetron sputtering apparatus capable of effectively suppressing a film thickness distribution from being biased with simple constitution.SOLUTION: A film deposition method of depositing a film to a target film thickness has the processes of: arranging a substrate W to be processed and a target 2 opposite each other, generating, by a magnet unit arranged above the target with a direction from the substrate to be processed to the target up, a tunnel-shaped leakage magnetic field in a space below the target while biasing it from the target center toward a peripheral edge part of the target, revolving the leakage magnetic field around the center of the target, and depositing a film to a first film thickness thinner than the target film thickness at a reference position which is the position of the substrate to be processed where the substrate to be processed and the target face straight each other when the target begins to be sputtered; and depositing the film to a second film thickness thinner than the target film thickness at least at one correction position which is the position of the substrate to be processed which has been rotated by a predetermined angle θ from the reference position around the center of the substrate to be processed as the center of rotation.SELECTED DRAWING: Figure 3
Inventors:
Shinji Kobayashi
Fukumoto Hidenori
Junichi Ito
Fukumoto Hidenori
Junichi Ito
Application Number:
JP2016250026A
Publication Date:
April 14, 2021
Filing Date:
December 22, 2016
Export Citation:
Assignee:
ULVAC, Inc.
International Classes:
C23C14/34; C23C14/50; H01L21/316
Foreign References:
| US20040003771 |
Attorney, Agent or Firm:
Seiryu Corporation