Title:
スパッタリングターゲット、窒化チタン膜の製造方法、および半導体素子の製造方法
Document Type and Number:
Japanese Patent JP6871301
Kind Code:
B2
Abstract:
To provide a method of manufacturing a sputtering target which can with high reproductivity and stably be made by a curtailed process compared with the conventional process, the sputtering target featuring: minute crystalline structure with no residual cast structure; random orientation of the crystalline structure; reduced internal distortion such as microcracks in the crystalline structure which cause minute dust, and also to provide a sputtering target to which the manufacturing method is applied.SOLUTION: The sputtering target has a microstructure with an average crystal grain size of 15 μm or less and has a randomly oriented crystalline structure. When X-ray diffraction of sputter faces of the sputtering target is measure, the sputter faces satisfy a condition of I(101)>I(002)>I(100), where I(100) represents the relative intensity of a diffraction peak from a face (100), I(002) represents the relative intensity of a diffraction peak from a face (002), and I(101) represents the relative intensity of a diffraction peak from a face (101), and the half-value width of the diffraction peak of each face is less than 0.2 deg.SELECTED DRAWING: Figure 1
Inventors:
Toru Komatsu
Nobuaki Nakajima
Nobuaki Nakajima
Application Number:
JP2019085457A
Publication Date:
May 12, 2021
Filing Date:
April 26, 2019
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Materials Co., Ltd.
Toshiba Materials Co., Ltd.
International Classes:
C23C14/34; C22C14/00; C22F1/18
Domestic Patent References:
| JP2002180243A | ||||
| JP2001509548A |
Foreign References:
| WO2011111373A1 |
Attorney, Agent or Firm:
Patent Business Corporation Sakura International Patent Office