Title:
パターン形成方法
Document Type and Number:
Japanese Patent JP6875325
Kind Code:
B2
Abstract:
The present invention is a patterning process, including the steps of: (1) forming the first resist film from the first resist material containing a thermosetting compound having a hydroxy group and/or a carboxy group each protected by an acid-labile group, an acid generator, and a sensitizer; (2) irradiating the first resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or the carboxy group in a pattern exposed portion; (3) forming the second resist film from the second resist material containing (A) metal compound on the first resist film, and forming a crosslinked portion in which the component (A) and the deprotected hydroxy group and/or the deprotected carboxy group are crosslinked on the pattern exposed portion; and (4) developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.
Inventors:
Tsukasa Watanabe
Tsutomu Ogiwara
Tsutomu Ogiwara
Application Number:
JP2018097444A
Publication Date:
May 19, 2021
Filing Date:
May 21, 2018
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/38; G03F7/004; G03F7/20
Domestic Patent References:
| JP2016035956A | ||||
| JP2018013751A | ||||
| JP2017107140A | ||||
| JP2000347406A |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi