Title:
閾値電圧が調整可能な高電子移動度トランジスタ
Document Type and Number:
Japanese Patent JP6880251
Kind Code:
B2
Abstract:
A high electron mobility transistor includes a set of electrodes, such as a source, a drain, a top gate, and a side gate, and includes a semiconductor structure having a fin extending between the source and the drain. The top gate is arranged on top of the fin, and the side gate is arranged on a sidewall of the fin at a distance from the top gate. The semiconductor structure includes a cap layer positioned beneath the top gate and a channel layer arranged beneath the cap layer for providing electrical conduction. The cap layer includes nitride-based semiconductor material to enable a heterojunction forming a carrier channel between the source and the drain.
Inventors:
Theo, Kuhn Fu
Chow Dolly, Nadim
Chow Dolly, Nadim
Application Number:
JP2019572258A
Publication Date:
June 02, 2021
Filing Date:
March 30, 2018
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/337; H01L21/338; H01L29/778; H01L29/808; H01L29/812
Domestic Patent References:
| JP2016054215A | ||||
| JP2017521869A |
Foreign References:
| US20120112251 | ||||
| US20170162702 | ||||
| US20170018638 |
Attorney, Agent or Firm:
Michiharu Soga
Kajinami order
Kazuhiro Oyaku
Shunichi Ueda
Junichiro Yoshida
Kajinami order
Kazuhiro Oyaku
Shunichi Ueda
Junichiro Yoshida