Title:
半導体基板の製造方法、光電変換素子の製造方法および光電変換素子
Document Type and Number:
Japanese Patent JP6898737
Kind Code:
B2
Abstract:
A method for producing a semiconductor substrate (1) and a method for manufacturing a photoelectric conversion element, each of which comprises: a step for performing alkali etching of the semiconductor substrate (1); and a step for performing acid etching of the semiconductor substrate (1) after the alkali etching step. A semiconductor substrate which is provided with a recessed portion (40) in a main surface (1a), and wherein the recessed portion (40) is provided with a terrace (43) and a step (42) that is an inclined surface extending obliquely upward from the terrace (43). The inclination angle of the step (42) to the terrace (43) is less than 48.7°.
Inventors:
Asano Naojo
Okamoto relatives
Ken Hieda
Yuta Matsumoto
Tsuyoshi Kamikawa
Okamoto relatives
Ken Hieda
Yuta Matsumoto
Tsuyoshi Kamikawa
Application Number:
JP2016564829A
Publication Date:
July 07, 2021
Filing Date:
December 11, 2015
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/306; H01L21/308; H01L31/0392; H01L31/0747
Domestic Patent References:
| JP2012238853A | ||||
| JP2008147637A | ||||
| JP2002217163A | ||||
| JP2014075526A |
Foreign References:
| WO2013098955A1 |
Attorney, Agent or Firm:
Tomoya Inoue
Koji Kato
Koji Kato