Title:
核形成のない間隙充填ＡＬＤプロセス
Document Type and Number:
Japanese Patent JP6913752
Kind Code:
B2
Abstract:
Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.
Inventors:
Chen, Ehon
Chan, Kelvin
Le, Shinryan
Gandikotta, Shrinivers
Woo, Yong
Roy, Susmit Singha
Chin, cheer cheong
Chan, Kelvin
Le, Shinryan
Gandikotta, Shrinivers
Woo, Yong
Roy, Susmit Singha
Chin, cheer cheong
Application Number:
JP2019531962A
Publication Date:
August 04, 2021
Filing Date:
November 29, 2017
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C16/14; H01L21/3205; C23C16/16; H01L21/768; H01L23/532
Domestic Patent References:
| JP2014019912A | ||||
| JP2015232177A | ||||
| JP2001110747A |
Foreign References:
| US20140030889 |
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation