Title:
ドーパント種をワークピース上に堆積する堆積方法、ドーパント種をワークピース内に注入する注入方法及びワークピースを処理するワークピース処理方法
Document Type and Number:
Japanese Patent JP6915057
Kind Code:
B2
Abstract:
A method of processing a workpiece is disclosed, where the interior surfaces of the plasma chamber are first coated using a conditioning gas that contains the desired dopant species. A working gas, which does not contain the desired dopant species, is then introduced and energized to form a plasma. This plasma is used to sputter the desired dopant species from the interior surfaces. This dopant species is deposited on the workpiece. A subsequent implant process may then be performed to implant the dopant into the workpiece. The implant process may include a thermal treatment, a knock in mechanism, or both.
Inventors:
Siamac Salimian
Kigao
Helen El Maynard
Kigao
Helen El Maynard
Application Number:
JP2019522472A
Publication Date:
August 04, 2021
Filing Date:
September 20, 2017
Export Citation:
Assignee:
Varian Semiconductor Equipment Associates, Inc.
International Classes:
C23C14/48; C23C14/58; H01L21/265
Domestic Patent References:
| JP2004047695A | ||||
| JP2007538413A |
Foreign References:
| WO2006121131A1 | ||||
| KR20140012727A |
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Masaaki Ishikawa
Mitsutsugu Sugimura
Masaaki Ishikawa