Title:
光検出素子
Document Type and Number:
Japanese Patent JP6918631
Kind Code:
B2
Abstract:
A photodetection element is a photodetection element having an incidence surface for light on a back surface of a semiconductor layer, and includes a periodic nano-concave/convex structure provided on a front surface of the semiconductor layer and having convex portions and concave portions constituting a longitudinal resonator and a transverse resonator for the light incident from the incidence surface, the periodic nano-concave/convex structure converting the light into surface plasmons, and a metal film provided to cover the periodic nano-concave/convex structure, a height and an arrangement pitch of the convex portions in the periodic nano-concave/convex structure are set such that a resonance wavelength of the longitudinal resonator and a resonance wavelength of the transverse resonator match, and a thickness of the metal film is equal to or greater than 20 nm.
Inventors:
Hiroyasu Fujiwara
Tong Wei
Kazutoshi Nakajima
Hayashi Shohei
Tong Wei
Kazutoshi Nakajima
Hayashi Shohei
Application Number:
JP2017158033A
Publication Date:
August 11, 2021
Filing Date:
August 18, 2017
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L31/108; B82Y20/00
Domestic Patent References:
| JP2015026631A | ||||
| JP2009038352A | ||||
| JP2008053615A | ||||
| JP2014229779A |
Foreign References:
| CN103811580A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Kenichi Shibayama
Hiromitsu Nakayama
Yoshiki Kuroki
Kenichi Shibayama
Hiromitsu Nakayama