Title:
ＳｉＯＣ薄膜の形成
Document Type and Number:
Japanese Patent JP6923355
Kind Code:
B2
Abstract:
Disclosed is a process for forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space by a plurality of deposition cycles. At least one deposition cycle includes contacting a surface of the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that includes reactive species. The reactive species are generated from a gas that flows continuously to the reaction space throughout the at least one deposition cycle. A ratio of a wet etch rate of the SiOC thin film to a wet etch rate of thermal silicon oxide is less than 5.
Inventors:
Toshiya Suzuki
Poa Vijay Jay.
Poa Vijay Jay.
Application Number:
JP2017092684A
Publication Date:
August 18, 2021
Filing Date:
May 08, 2017
Export Citation:
Assignee:
AS MIP Holding B.V.
International Classes:
H01L21/316
Domestic Patent References:
| JP2014229834A | ||||
| JP2014135475A | ||||
| JP2010219533A | ||||
| JP2015523917A | ||||
| JP2003342731A | ||||
| JP9055365A | ||||
| JP2015088562A |
Foreign References:
| WO2016042663A1 | ||||
| US20150380302 | ||||
| WO2013054655A1 |
Attorney, Agent or Firm:
Takashi Onodera