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Title:
飛行時間型撮像素子
Document Type and Number:
Japanese Patent JP6930805
Kind Code:
B2
Abstract:
The invention relates to a majority current assisted detector device, comprising a semiconductor layer (40) of a first conductivity type, at least two control regions (MIX0, MIX1) of the first conductivity type, at least two detection regions (DET0, DET1) of a second conductivity type opposite to the first conductivity type and means for generating a majority carrier current associated with an electrical field. The detection regions surround the control regions for forming at least two taps. The concentration of dopants of the first conductivity type in the semiconductor layer (40) provides an electrical insulation between the detection regions by avoiding leakage of minority carriers from the detection regions (DET0, DET1). When the detector device is configured for backside illumination, it may further comprise a well (45) of the first conductivity type between the two detection regions (DET0, DET1) for insulating the detection regions and wherein the well (45) comprises receiving pixel circuitry elements.

Inventors:
Futpro, Kiriaki Korina
Van der Tempel, Waldo
Application Number:
JP2019024641A
Publication Date:
September 01, 2021
Filing Date:
February 14, 2019
Export Citation:
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Assignee:
Sony Depth Sensing Solutions SNAV
International Classes:
H01L27/146; G01S7/4863; H04N5/369; G01S17/894
Domestic Patent References:
JP2011086904A
JP2007506269A
JP2015510259A
JP2014509382A
Foreign References:
WO2013104718A2
WO2007119626A1
US20110063614
US20050051730
Attorney, Agent or Firm:
Junichi Omori
Mitsuru Takahashi
Teppei Nakamura
Ori Akira
Masayoshi Sekine
Ayako Kaneko
Shintaro Kanayama
Chiba Ayako
Shiraka Tomohisa