Title:
半導体装置
Document Type and Number:
Japanese Patent JP6931869
Kind Code:
B2
Abstract:
Provided is a semiconductor device including a metal layer 130 on a surface of a metal electrode 120 formed on a semiconductor chip 110, the metal layer 130 consisting of a metal or an alloy different from a constituent metal of the metal electrode 120, metal wiring 140 is connected to the metal layer 130 via a bonding part 150, wherein the constituent metal of the metal layer 130 is a metal or an alloy different from the constituent metal of the metal electrode 120, and the bonding part 150 has an alloy region harder than the metal wiring 140.
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Inventors:
Hidekazu Tanizawa
Shinji Sato
Fumiki Kato
Hiroshi Sato
Kenichi Takai
Hiroki Takahashi
Yoshinori Murakami
Shinji Sato
Fumiki Kato
Hiroshi Sato
Kenichi Takai
Hiroki Takahashi
Yoshinori Murakami
Application Number:
JP2016206964A
Publication Date:
September 08, 2021
Filing Date:
October 21, 2016
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
Fuji Electric Co., Ltd.
Sanken Electric Co., Ltd.
Nissan Motor Co., Ltd
Fuji Electric Co., Ltd.
Sanken Electric Co., Ltd.
Nissan Motor Co., Ltd
International Classes:
H01L21/60; H01L21/3205; H01L21/768; H01L23/522
Domestic Patent References:
| JP63051649A | ||||
| JP8124973A | ||||
| JP2007096231A | ||||
| JP2014112581A | ||||
| JP61160958A | ||||
| JP63300522A | ||||
| JP60035552A | ||||
| JP2015142010A | ||||
| JP2011243752A | ||||
| JP2011228405A |
Attorney, Agent or Firm:
Ito On