Title:
完全空乏型シリコン・オン・インシュレータ・フラッシュメモリ設計
Document Type and Number:
Japanese Patent JP6937747
Kind Code:
B2
Abstract:
The present invention relates to a flash memory system comprising one or more sense amplifiers for reading data stored in flash memory cells. The sense amplifiers utilize fully depleted silicon-on-insulator transistors to minimize leakage. The fully depleted silicon-on-insulator transistors comprise one or more fully depleted silicon-on-insulator NMOS transistors and/or one or more fully depleted silicon-on-insulator PMOS transistors.
Inventors:
Tran Hugh Van
Lee Ann
Vu Touan
Nguyen Hung Quoc
Lee Ann
Vu Touan
Nguyen Hung Quoc
Application Number:
JP2018517289A
Publication Date:
September 22, 2021
Filing Date:
September 14, 2016
Export Citation:
Assignee:
SILICON STORAGE TECHNOLOGY, INC.
International Classes:
G11C16/08; G11C16/26; H01L21/336; H01L29/788; H01L29/792
Domestic Patent References:
| JP2008205322A |
Foreign References:
| US20150076564 | ||||
| US20140091846 |
Attorney, Agent or Firm:
Shinichiro Tanaka
Hiroyuki Suda
Fumiaki Otsuka
Takaki Nishijima
Hiroshi Uesugi
Naoki Kondo
Takeo Nasu
Yoshinobu Iwasaki
Hiroyuki Suda
Fumiaki Otsuka
Takaki Nishijima
Hiroshi Uesugi
Naoki Kondo
Takeo Nasu
Yoshinobu Iwasaki