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Title:
バルク波共振子および帯域通過フィルタ
Document Type and Number:
Japanese Patent JP6947867
Kind Code:
B2
Abstract:
[PROBLEM TO BE SOLVED] To provide a bulk wave resonator having a high frequency passband.[SOLUTION] A bulk wave resonator using a bulk wave, includes a support substrate, an acoustic multilayer film that includes, stacked on the support substrate, a plurality of types of dielectrics having different acoustic impedances, a piezoelectric layer that is stacked on the acoustic multilayer film, a first electrode, and a second electrode. The first and second electrodes are disposed to face each other with a gap therebetween on a first surface of the piezoelectric layer opposite to the acoustic multilayer film, and are applied with a voltage for allowing the piezoelectric layer to generate the bulk wave. A direction that is parallel to the surface of the piezoelectric layer and in which the first electrode and the second electrode face each other is defined as a first direction. The bulk wave resonator uses, as a main mode, a bulk wave in the first direction that is generated by a thickness shear vibration in the first direction, which is excited by a parallel electric field formed in the piezoelectric layer when a voltage applied to the first electrode and the second electrode.

Inventors:
Hiroshi Hasegawa
Tadashi Iwata
Takumi Ozaki
Nakamura Ira
Application Number:
JP2020053005A
Publication Date:
October 13, 2021
Filing Date:
March 24, 2020
Export Citation:
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Assignee:
Dexerials Co., Ltd.
International Classes:
H03H9/17; H03H9/54
Domestic Patent References:
JP9199980A
JP2010136317A
JP2013528996A
JP2015502065A
JP2010161671A
JP2013123184A
JP2001077657A
JP2001339272A
JP2007028594A
JP2007507960A
JP2008502240A
Foreign References:
WO2010007805A1
Attorney, Agent or Firm:
Aomi patent office