Title:
半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP6950816
Kind Code:
B2
Abstract:
A semiconductor device includes: a substrate (10) having a groove (100) formed on a main surface of the substrate (10); a drift region (20) of a first conductivity type, the drift region (20) having a portion disposed at a bottom part of the groove (100); a well region (30) of a second conductivity type, the well region (30) being disposed in one sidewall of the groove (100) to be connected to the drift region (20); a first semiconductor region (40) of the first conductivity type, the first semiconductor region (40) being disposed on a surface of the well region (30) in the sidewall of the groove (100) to be away from the drift region (20); a second semiconductor region (50) of the first conductivity type, the second semiconductor region (50) being disposed in the groove (100) to be opposed to the well region (30) via the drift region (20); and a gate electrode (60) opposed to the well region (30), the gate electrode (60) being disposed in a gate trench that has an opening extending over the upper surfaces of the well region (30) and the first semiconductor region (40) and extends in a depth direction of the groove (100).
Inventors:
Marui Shunji
Tetsuya Hayashi
Keiichiro Numakura
Dread
Ryota Tanaka
Keisuke Takemoto
Tetsuya Hayashi
Keiichiro Numakura
Dread
Ryota Tanaka
Keisuke Takemoto
Application Number:
JP2020510158A
Publication Date:
October 13, 2021
Filing Date:
March 26, 2018
Export Citation:
Assignee:
Nissan Motor Co., Ltd
International Classes:
H01L21/336; H01L21/265; H01L29/12; H01L29/78
Domestic Patent References:
| JP2003142684A | ||||
| JP2009302450A | ||||
| JP2001274398A | ||||
| JP2000133801A | ||||
| JP2011181583A | ||||
| JP10214969A |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu