Title:
貼り合わせウェーハのエッジトリミング加工方法、及びエッジトリミング加工装置
Document Type and Number:
Japanese Patent JP7324920
Kind Code:
B2
Abstract:
To ensure trimming of the edge of a wafer periphery by an appropriate amount similar to a target machining amount in a laminated wafer formed by laminating two wafers substantially similar in shape.SOLUTION: In a laminated wafer, a bond wafer is stuck on a base wafer via an adhesive or the like. In a method for trimming the edge of the laminated wafer, a protruding area of the bond wafer from the base wafer is detected by using an outer diameter measurement device. In a grinding step of a first stage, the peripheral edge of only the bond wafer including the protruding area is ground. Then, in a grinding step of a second stage, the bond wafer and the base wafer are simultaneously ground, and the peripheral edge of the laminated wafer is edge-trimmed in a prescribed shape.SELECTED DRAWING: Figure 6
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Inventors:
Keigo Suzuki
Ikuma Haruka
Ikuma Haruka
Application Number:
JP2022153894A
Publication Date:
August 10, 2023
Filing Date:
September 27, 2022
Export Citation:
Assignee:
Tokyo Seimitsu Co., Ltd.
International Classes:
B24B9/00; B24B49/12; H01L21/304
Domestic Patent References:
| JP2015102389A | ||||
| JP5226305A | ||||
| JP2012007898A |
Attorney, Agent or Firm:
Spring Patent Attorney Corporation