Title:
高品質酸化ケイ素薄膜の高温原子層堆積のための組成物
Document Type and Number:
Japanese Patent JP7329045
Kind Code:
B2
Abstract:
Atomic layer deposition (ALD) process formation of silicon oxide with temperature >600° C. is disclosed. Silicon precursors used have a formula of: I.R1R2mSi(NR3R4)n wherein R1, R2, and R3 are each independently selected from a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R4 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group, a C3 to C10 alkylsilyl group; wherein R3 and R4 are linked to form a cyclic ring structure or R3 and R4 are not linked to forma cyclic ring structure; m is 0 to 2; n is 1 to 3; and m+n=3.
Inventors:
Mei Liang Wan
Cinchien Ray
Madukal Bee Lao
Cinchien Ray
Madukal Bee Lao
Application Number:
JP2021518587A
Publication Date:
August 17, 2023
Filing Date:
October 03, 2019
Export Citation:
Assignee:
Vertham Materials US, Limited Liability Company
International Classes:
H01L21/316; C23C16/42; C23C16/455; H01L21/318
Domestic Patent References:
| JP2013236073A | ||||
| JP2012124492A |
Foreign References:
| WO2018170126A1 |
Attorney, Agent or Firm:
Atsushi Aoki
Shinji Mihashi
Kenji Kimura
Naonori Koda
Jun Iwata
Shinji Mihashi
Kenji Kimura
Naonori Koda
Jun Iwata