Title:
半導体装置
Document Type and Number:
Japanese Patent JP7377302
Kind Code:
B2
Abstract:
A transistor with excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) is provided. The transistor includes an oxide semiconductor layer including a channel formation region, a first gate electrode, a second gate electrode, a source electrode, and a drain electrode. The oxide semiconductor layer is between the first gate electrode and the second gate electrode. The oxide semiconductor layer has a pair of side surfaces in contact with the source electrode and the drain electrode and includes a region surrounded by the first gate electrode and the second gate electrode without the source electrode and the drain electrode interposed therebetween.
Inventors:
Shunpei Yamazaki
Masahiro Katayama
Kenichi Okazaki
Jun Koyama
Masahiro Katayama
Kenichi Okazaki
Jun Koyama
Application Number:
JP2022042311A
Publication Date:
November 09, 2023
Filing Date:
March 17, 2022
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L29/41; H01L29/423; H01L29/49
Domestic Patent References:
| JP2002328617A |
Foreign References:
| WO2012032749A1 |