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Title:
固体撮像素子および撮像装置、ならびに白キズ抑制方法
Document Type and Number:
Japanese Patent JP7402635
Kind Code:
B2
Abstract:
To provide a photoelectric conversion film laminated solid-state image sensor and imaging apparatus, capable of preventing a white flaw from being generated on a screen even when a film defect is formed in a photoelectric conversion film and capable of generating an electric charge multiplication phenomenon by applying film voltage until its value reaches a set desired value.SOLUTION: A CMOS solid-state image sensor includes a photoelectric conversion film 20 stacked on a pixel circuit 10. The pixel circuit 10 is configured using a method of forming an n-type MOS transistor part 2 on a p-type substrate 1 and has a pixel electrode 3 disposed at the pixel circuit's upper part. A photoelectric conversion film 20 is composed of a crystal selenium layer 5 forming a photoelectric conversion layer-cum-electric charge multiplication layer, a gallium oxide layer 4 forming a hole injection blocking layer, and an ITO layer 6 forming a film electrode that are stacked in this order. To the ITO layer 6, relatively positive voltage to reset voltage of the pixel electrode 3 is applied. Holes of electron-hole pairs generated due to photoelectric conversion are used as transit carriers in the photoelectric conversion film 20.SELECTED DRAWING: Figure 5

Inventors:
Toshiki Arai
Naruto Tamemura
Keichu Mineo
Yuuki Honda
Kazunori Miyagawa
Toshihisa Watanabe
Masakazu Namba
Setsu Kubota
Application Number:
JP2019143729A
Publication Date:
December 21, 2023
Filing Date:
August 05, 2019
Export Citation:
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Assignee:
Japan Broadcasting Corporation
International Classes:
H01L27/146; H01L31/10; H01L31/107; H04N25/76
Domestic Patent References:
JP2017152669A
JP2018164082A
JP2017208376A
JP2017168823A
JP2014017440A
Foreign References:
US20170250216
WO2018172880A1
Attorney, Agent or Firm:
Hiroshi Kawano
Ryohei Kaizuka