Title:
プラズマ処理装置
Document Type and Number:
Japanese Patent JP7407645
Kind Code:
B2
Abstract:
A plasma processing apparatus includes: a chamber accommodating a plurality of substrates; a plurality of substrate supports provided inside the chamber and configured to support a substrate; a plurality of radio-frequency power sources provided corresponding to the plurality of substrate supports, and configured to supply radio-frequency power to the plurality of substrate supports, respectively; and a plurality of shields configured to compart the inside of the chamber and provided corresponding to the plurality of substrate supports to define a processing space where plasma is generated. A radio-frequency current path is formed between the plurality of shields so as not to interfere with one another.
Inventors:
Kei Higashihara
Naoichi Furuya
Yousuke Tamuro
Yuzuru Sakai
Naoichi Furuya
Yousuke Tamuro
Yuzuru Sakai
Application Number:
JP2020067287A
Publication Date:
January 04, 2024
Filing Date:
April 03, 2020
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H05H1/46; H01L21/3065; H01L21/31
Domestic Patent References:
| JP2009004729A | ||||
| JP2014141710A | ||||
| JP2019102680A |
Attorney, Agent or Firm:
Tetsuo Kanemoto
Koji Hagiwara
Naoki Ogita
Takashi Saito
Takuya Mine
Koji Hagiwara
Naoki Ogita
Takashi Saito
Takuya Mine