Title:
半導体装置
Document Type and Number:
Japanese Patent JP7407757
Kind Code:
B2
Abstract:
A semiconductor device of embodiments includes: a transistor region including a semiconductor layer having a first face and a second face opposite to the first face, a first transistor having a first gate electrode provided on a first face side of the semiconductor layer, and a second transistor having a second gate electrode provided on a second face side of the semiconductor layer; and an adjacent region adjacent to the transistor region and including the semiconductor layer and a third transistor having a third gate electrode electrically connected to the second gate electrode and provided on the second face side of the semiconductor layer and the third transistor having an absolute value of a threshold voltage smaller than an absolute value of a threshold voltage of the second transistor.
Inventors:
Tomoko Sueshiro
Yoko Iwao
Yoko Iwao
Application Number:
JP2021044115A
Publication Date:
January 04, 2024
Filing Date:
March 17, 2021
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
International Classes:
H01L29/739; H01L21/336; H01L21/76; H01L21/8234; H01L27/06; H01L27/088; H01L29/06; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| JP2021034506A | ||||
| JP2020177973A | ||||
| JP2009021557A | ||||
| JP64057674A | ||||
| JP2020047789A |
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Masahiro Koshita
Akira Sudo
Masahiro Koshita