Title:
半導体レーザ装置およびその製造方法
Document Type and Number:
Japanese Patent JP7411872
Kind Code:
B2
Abstract:
A semiconductor laser device (100) includes: a first electrode (11); a second electrode (12); a semiconductor laser diode (15) sandwiched between the first electrode and the second electrode; an optical component (16) disposed on a side of said device in the direction of emission of laser light from the semiconductor laser diode; and a fixing component (13). The optical component (16) is fixed to the fixing component (13). The fixing component (13) is adhered to the first electrode at a lateral surface (S1) at which the laser light of the first electrode (11) is emitted. The fixing component (13) includes a through hole (17) that exposes the lateral surface (S1).
Inventors:
Mitsuoki Hishida
Application Number:
JP2022505098A
Publication Date:
January 12, 2024
Filing Date:
February 16, 2021
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01S5/022
Foreign References:
| WO2016063436A1 | ||||
| US20150364901 |
Attorney, Agent or Firm:
Kenji Kamada
Kenji Maeda
Kenji Maeda