Title:
炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7415558
Kind Code:
B2
Abstract:
This silicon carbide epitaxial substrate has a silicon carbide substrate (10) and a silicon carbide epitaxial film (20). The silicon carbide epitaxial film includes a first layer (21) and a second layer (22). The concentration of n-type impurities contained in the first layer is lower than the concentration of n-type impurities contained in the silicon carbide substrate, and is higher than the concentration of n-type impurities contained in the second layer. The silicon carbide substrate has a main surface (12) which has a basal plane dislocation having a first surface density. The silicon carbide epitaxial film has a main surface (14) having a basal plane dislocation having a second surface density lower than the first surface density. The value obtained by dividing the second surface density by the first surface density is 1/1000 or less. The main surface of the silicon carbide epitaxial film is sloped with respect to the (000-1) plane or the (000-1) plane at an off-angle of 8° or less.
Inventors:
Hironori Ito
Tsutomu Hori
Tsutomu Hori
Application Number:
JP2019538952A
Publication Date:
January 17, 2024
Filing Date:
April 24, 2018
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B29/36; C30B25/20; H01L21/20; H01L21/265; H01L21/336; H01L29/12; H01L29/739; H01L29/78
Domestic Patent References:
| JP2010135789A | ||||
| JP2006028016A | ||||
| JP2005167035A | ||||
| JP2013107788A | ||||
| JP2009088223A | ||||
| JP2012246168A | ||||
| JP2016166101A | ||||
| JP2013239606A | ||||
| JP2017059670A |
Foreign References:
| US20140054609 | ||||
| WO2009107188A1 |
Other References:
Hidekazu TSUCHIDA et.al,Japanese Journal of Applied Physics,2005年,Vol.44,No.25,pp.L806-L808
Attorney, Agent or Firm:
Patent Attorney Fukami Patent Office