Title:
ＳｉＣインゴットの製造方法及びＳｉＣインゴット
Document Type and Number:
Japanese Patent JP7415810
Kind Code:
B2
Abstract:
To provide a method for manufacturing a SiC ingot, capable of suppressing the occurrence of different polymorphs and crystal defects, and a SiC ingot obtained by the manufacturing method.SOLUTION: A method for manufacturing a SiC ingot comprises: a preparation step of preparing a seed crystal 10 having a size of 6 inches or more, having an offset angle of 2-6° in a first direction x and having an artificial defect 11 on the side of a first end 10a in the first direction x; and a growth step of growing a single crystal 20 on a first surface 10A of the seed crystal 10. In the growth step, the diameter of the single crystal 20 becomes larger from the diameter of the seed crystal 10 as the single crystal is grown. The growth step is divided into a growth former half having a growth amount h3 of less than 8 mm in the center 10c of the seed crystal 10 in the first direction x and a growth latter half after the growth former half. In the growth latter half, a growth amount h1 in a first end 20a in the first direction x is smaller than a growth amount h2 in a second end 20b on the side opposite to the first end 20a in the first direction x.SELECTED DRAWING: Figure 1
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Inventors:
Yohei Fujikawa
Application Number:
JP2020098609A
Publication Date:
January 17, 2024
Filing Date:
June 05, 2020
Export Citation:
Assignee:
Resonac Co., Ltd.
International Classes:
C30B29/36; C23C14/06; C30B23/06
Domestic Patent References:
| JP2018104231A | ||||
| JP8245299A | ||||
| JP2009051701A |
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomoo Katsumata
Ryuichiro Majima
Norihiko Ara
Tomoo Katsumata
Ryuichiro Majima