Title:
反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
Document Type and Number:
Japanese Patent JP7416343
Kind Code:
B2
Abstract:
A reflective mask blank for EUV lithography comprising a substrate, a multilayer reflective film that reflects EUV light, a protective film that protects the multilayer reflective film, and an absorption film that absorbs EUV light, in this order from bottom to top, wherein the protective film is provided with an upper layer that comprises a rhodium-based material and contains Rh, or Rh and at least one element selected from the group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti, and a lower layer that, in the EUV region, satisfies k<-0.15n+0.16 (where n is the index of refraction and k is the extinction coefficient).
Inventors:
Daijiro Akagi
Hiroaki Iwaoka
Wataru Nishida
Ichiro Ishikawa
Kenichi Sasaki
Hiroaki Iwaoka
Wataru Nishida
Ichiro Ishikawa
Kenichi Sasaki
Application Number:
JP2023552062A
Publication Date:
January 17, 2024
Filing Date:
December 26, 2022
Export Citation:
Assignee:
AGC Inc.
International Classes:
G03F1/24
Domestic Patent References:
| JP2004363570A | ||||
| JP2021056502A | ||||
| JP2021184108A |
Foreign References:
| WO2011071086A1 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito