Title:
半導体装置、半導体装置の製造方法及び電子装置
Document Type and Number:
Japanese Patent JP7417070
Kind Code:
B2
Abstract:
To provide a semiconductor device including a transistor with excellent performance.SOLUTION: A transistor 20 is provided in an active region 12 in a semiconductor layer 10 and includes an electrode part provided on a surface of the active region 12 in a central part AR1 and an external part AR2. The electrode part is a source electrode included in a source conductor 23 and a drain electrode included in a drain conductor 24, for example. As a contact layer with the electrode part provided on the surface, an n-type AlxGa1-xN (0
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Inventors:
Yoichi Kamada
Application Number:
JP2020018527A
Publication Date:
January 18, 2024
Filing Date:
February 06, 2020
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/338; H01L21/336; H01L21/337; H01L29/778; H01L29/78; H01L29/808; H01L29/812
Domestic Patent References:
| JP2018056320A | ||||
| JP2016115931A | ||||
| JP2018056506A | ||||
| JP2007538402A |
Foreign References:
| US20160172473 | ||||
| US20050258451 | ||||
| CN1998085A |
Attorney, Agent or Firm:
Patent Attorney Corporation Fuso International Patent Office