単結晶インゴット、結晶育成用ダイ、及び単結晶の製造方法

Title:

単結晶インゴット、結晶育成用ダイ、及び単結晶の製造方法

Document Type and Number:

Japanese Patent JP7436978

Kind Code:

B2

Abstract:

An as-grown single crystal ingot 1 of a dopant-containing metal oxide or quasi-binary compound is provided in which a lateral surface 221 has a length L greater than or equal to 50 mm, there is a linear recess 222 on the lateral surface 221, and, in the area surrounded by the lateral surface 221, the outer shape of the cross-section perpendicular to the length direction and positioned spaced 50 mm away in the length direction from the other end in the length direction without with the recess 222 is such that, outside of the area formed by the line of intersection between the cross-section and a faceted surface, the maximum value of the distance X of the recess 222 from an ideal outer shape 30 is less than or equal to 5 mm.

Inventors:

Hirohiko Kumagai
Yu Yamaoka

Application Number:

JP2019195191A

Publication Date:

February 22, 2024

Filing Date:

October 28, 2019

Export Citation:

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