Title:
受光素子および電子機器
Document Type and Number:
Japanese Patent JP7445397
Kind Code:
B2
Abstract:
An embodiment of the present technology includes an avalanche photodiode including a substrate including a first side with a first surface and a second side with a second surface that is opposite the first surface. The second surface is a light-incident surface of the substrate. The avalanche photodiode includes an anode region disposed in the substrate at the first side of the substrate, an anode electrode coupled to the anode region, a cathode region disposed in the substrate at the first side of the substrate, a cathode electrode coupled to the cathode region, and an insulating layer disposed in the substrate at the first side of the substrate. The anode electrode or the cathode electrode passes through the insulating layer.
Inventors:
Hiroaki Murakami
Application Number:
JP2019141690A
Publication Date:
March 07, 2024
Filing Date:
July 31, 2019
Export Citation:
Assignee:
Sony Semiconductor Solutions Corporation
International Classes:
H01L31/107; H01L27/146; H04N25/704; H04N25/705
Domestic Patent References:
JP2019033136A |
Foreign References:
US10204950 | ||||
US20170186798 | ||||
WO2018174090A1 |
Attorney, Agent or Firm:
Sakai International Patent Office