Title:
ショットキーバリアダイオード
Document Type and Number:
Japanese Patent JP7456220
Kind Code:
B2
Abstract:
A Schottky barrier diode 1 includes: a semiconductor substrate made of gallium oxide; a drift layer made of gallium oxide; an anode electrode brought into Schottky contact with an upper surface of the drift layer; and a cathode electrode brought into ohmic contact with a lower surface of the semiconductor substrate. A ring-shaped outer peripheral trench is formed in the upper surface of the drift layer, and the anode electrode is partly filled in the outer peripheral trench. A ring-shaped back surface trench is formed in the lower surface of the semiconductor substrate such that the bottom thereof reaches the drift layer. This limits a current path to the area surrounded by the back surface trench, thereby mitigating electric field concentration in the vicinity of the bottom of the outer peripheral trench.
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Inventors:
Jun Arima
Minoru Fujita
Jun Hirabayashi
Minoru Fujita
Jun Hirabayashi
Application Number:
JP2020049789A
Publication Date:
March 27, 2024
Filing Date:
March 19, 2020
Export Citation:
Assignee:
SAE Magnetics(H.K.)Ltd.
International Classes:
H01L29/872; H01L29/06; H01L29/47
Domestic Patent References:
| JP2000294740A | ||||
| JP57048240A | ||||
| JP52064281A | ||||
| JP55082442A |
Foreign References:
| WO2019082580A1 |
Attorney, Agent or Firm:
Mitsuhiro Washito
Ogata Japanese
Ogata Japanese