Document Type and Number:
Japanese Patent JPH025333
Kind Code:
B2
Abstract:
A switched capacity filter having capacities formed by MOS technology on a semiconductor substrate. The connection between two capacities whose first plates are formed by the semiconductor substrate are periodically connected by providing transfer of charges in the substrate on which these two capacities are integrated. The external or other plate of each capacity receives, the input voltage, or a reference voltage, or the surface potential under another capacity which is provided by a reinjection and reading device formed from a diode and a voltage follower stage.
Inventors:
JAN RYUUKU BERUJEI
JAN RUI KUTEYUURU
JAN RUI KUTEYUURU
Application Number:
JP16594580A
Publication Date:
February 01, 1990
Filing Date:
November 27, 1980
Export Citation:
Assignee:
THOMSON CSF
International Classes:
H01L21/822; H01L27/04; H03H15/02; H03H19/00
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